![]() manufacturing method of grinding surface on glass cosmetics
专利摘要:
manufacturing method of surface grinding on glass cosmetics. a method of manufacturing the grinding surface on glass cosmetics, in particular a nail file and skin, from flat float glass, is carried out by marking at least one abrasive surface on one or two sides of a glass plate or intermediate product. this surface is then coated with a melting glue, sprayed with clean quartz sand with a grain size between 1 and 500 µm using a sieve, and the excess sand is then removed. the intermediate product with fixed sand is then inserted into the melting furnace, where it is baked at a temperature of up to 900 <198> c. the abrasive surface can then be roughened by sandblasting, before melting glue is applied; the intermediate product coated with the melting glue can be decorated with glass frit. 公开号:BR112012026243B1 申请号:R112012026243 申请日:2011-04-12 公开日:2020-04-22 发明作者:Skutchanová Zuzana 申请人:Zuzan Skutchanova; IPC主号:
专利说明:
(54) Title: METHOD OF MANUFACTURING MILLING SURFACE ON GLASS COSMETICS (51) Int.CI .: A45D 29/04. (30) Unionist Priority: 16/04/2010 CZ PV 2010-302. (73) Holder (s): ZUZAN SKUTCHANOVÁ. (72) Inventor (s): ZUZANA SKUTCHANOVÁ. (86) PCT Application: PCT CZ2011000034 of 12/04/2011 (87) PCT Publication: WO 2011/127873 of 10/20/2011 (85) Date of the Start of the National Phase: 11/10/2012 (57) Summary: METHOD OF GRINDING SURFACE MANUFACTURE ON GLASS COSMETICS. A method of manufacturing a grinding surface on glass cosmetics, in particular a nail file and skin, using FLOAT-type flat glass, is carried out by marking at least one abrasive surface on one or two sides of a glass plate or intermediate product. This surface is then coated with a melting glue, sprayed with clean quartz sand with a grain size between 1 and 500 190> m using a sieve, and the excess sand is then removed. The intermediate product with fixed sand is then inserted in the melting furnace, where it is baked at a temperature of up to 900 ° C> 198 ° C. The abrasive surface can then be roughened by sandblasting, before melting glue is applied; the intermediate product coated with the melting glue can be decorated with glass frit. / 7 “METHOD OF MANUFACTURING MILLING SURFACE ON GLASS COSMETICS” Field of the Invention [0001] The invention relates to a method of manufacturing the grinding surface on glass cosmetics, in particular a nail file and for thick skin, manufactured on flat glass of the FLOAT type. Fundamentals of the Invention [0002] Various tools are used to polish and file nails or to remove rough skin - metallic sandpaper and scrapers, abrasive paper-based sandpaper or products manufactured from glass are becoming increasingly popular. Compared to products from other materials, these offer several advantages - the most important being the possibility of cleaning them and eliminating an unfavorable impact on the sanded nail - the nail does not fray. Glass sandpapers satisfy the high hygienic demands related to all cosmetic procedures - this is very important for their use in public facilities. There are several technologies for making nail files rough - the abrasive surfaces of the first nail files have been achieved by means of producing mechanical roughness. The chemical glass etching method is often used. In this case, a strip of glass is first roughened by chemical etching, and is subsequently hardened. In this case, the abrasive surface roughness is 10 to 100 micrometers. In addition, nail files with a very thin surface, below 10 micrometers, were manufactured thanks to the glass hardening technology used subsequently. Such products have a substantial disadvantage - large volumes of hazardous chemicals are used in the production process. Considering the increasingly strict conditions of hygienic regulations and issues related to occupational safety, the costs of quality Petition 870190120932, of 11/21/2019, p. 6/33 / 7 corresponding work site and, in particular, the costs related to the disposal of used chemicals are significant. It is generally known that the technological process of surface etching is based on the chemical interaction between hydrofluoric acid and fluorides on the surface of the glass element. It is complicated to achieve several roughness levels of the same product. The disadvantage of ultrafine nail files is that their surface is often clogged with worn material. [0003] Alternative methods of producing surface roughness are based on fixing various types of sand to the glass surface, by means of an acid or by fixing fine sand with glue and their subsequent hardening with UV light. However, this method does not guarantee the required product quality. Sooner or later, the abrasive surface is worn out during use and the nail file loses its function. Summary of the Invention [0004] The abovementioned disadvantages are eliminated by the method of manufacturing the grinding surface on glass cosmetics, in particular the nail file and the skin from FLOAT-type flat glass according to the invention. , consisting of one or two sides of a glass plate or intermediate product with at least one marked abrasive surface, which is subsequently coated with a melting glue, sprayed with clean quartz sand with a grain size of 1-500 gm using a sieve, the excess sand is then removed, the intermediate product with the fixed sand being inserted into a melting furnace, where it is cooked to a temperature of up to 900 ° C, and the cooled intermediate product is rinsed with Water. An advantage is that the abrasive surface can be roughened by sandblasting before the melt glue is applied. Another advantage is that either the work surface or the non-work surface can be decorated Petition 870190120932, of 11/21/2019, p. 7/33 / 7 with glass frit after the application of the melting glue. Another important aspect is that the abrasive surface of the device can be symmetrical, asymmetrical, or have a decorated shape. At least two abrasive surfaces can be marked on one side of the device in advance. The spreading of the glue and the application of the sand are carried out, twice, either on one side or on both sides of the device, always with a different sand grain size. The principle also consists in marking the abrasive surface on both sides of the device and applying quartz sand with different grain sizes. Whenever a single device is used as the intermediate product, the abeasive surface is marked on both sides of the device and quartz sand is applied. If the glass plate is used as the intermediate product, it is cut into strips, once removed from the melting furnace, and the strips are then processed in the form of nail files. [0005] An advantage of the new method of manufacturing the abrasive surface of the glass cosmetic device is the use of the fusion method - the abrasive surface is formed or over a single intermediate product opu over the entire glass plate, which is subsequently cut into parts. Fusion can also be used to decorate the cosmetic device in one operation. The use of this method offers a wide range of surface abrasive configurations and is much easier to manufacture, compared to the methods currently used. Lastly, but equally important, the advantage of this method also consists of the safety and hygiene of the manufacturing process, as no chemical substances are required, unlike the case of the engraving process. Products manufactured using the described method have a much longer durability, compared to layers that are only hardened with UV light. Description of the Preferred Method [0006] In general, the technological procedure for producing the abrasive surface of the glass cosmetic device is as follows. THE Petition 870190120932, of 11/21/2019, p. 8/33 / 7 grip area and the work surface are marked on the device. Such a marked work surface is coated with a melting glue using either a brush or a roller and clean quartz sand with a grain size of between 1 and 500 gm is applied with a sieve. An advantage is that the abrasive surface can be roughened by sandblasting before the melt glue is applied. The excess sand, which does not adhere to the glue, is then removed, and the device is inserted into the melting furnace. The cooking of this surface occurs according to the melting cooking curve, at maximum temperatures between 760 ° C and 860 ° C. The cooking process lasts at least 420 minutes. [0007] Quartz glass sands are available in various grain sizes, where each type contains different particle sizes. Three types of glass sands are advantageously used for the production of the abrasive surface. [0008] For example, considering the designations introduced by Skolopisky Strelec a.s., a leading glass sand manufacturer in the Czech Republic, the following types of sand could be used: - glass sand - this sand is designated as ST 08 to ST 40, the numbers referring to the amount of Fe. These sands have the same grain size, from 1 gm to 500 gm. Sand with these particle sizes can be used conveniently for the production of abrasive surfaces of the pedicure equipment. - fine glass sand - the grain size of these sands is mentioned as being between 1 gm and 200 gm (STJ 08 - STJ 25). These areas are also available for the production of abrasive surfaces for pedicure equipment. - micronized sands - three grain size values are indicated for this sand - the sand is suitable for the aforementioned method of the cosmetic glass device for manicure. Petition 870190120932, of 11/21/2019, p. 9/33 / 7 1. 1-30 gm ST2 2. 1-20 gm ST6 3. 1-15 gm ST8 Example 1 [0009] Intermediate products (future nail files) are cut from a FLOAT glass plate. Four centimeters from the end are kept as the handle, while the melting glue is applied to the remaining surface using a roller. The glue is then sprayed with 1-300 gm glass sand, using a sieve. The sand is fixed to the surface and the excess sand is removed. The intermediate products are inserted into the melting furnace and cooked for eight hours, for ten minutes at a temperature of up to 850 ° C. The finished nail file is then rinsed with water after cooling. Example 2 [00010] Intermediate products (future nail files) are cut from a FLOAT glass plate. Four centimeters from the end are kept as the handle, and the remaining surface is sandblasted and the melt glue is then applied using a roller. The glue is then sprayed with glass sand, using a sieve. The sand is fixed to the surface and the excess sand is then removed. The intermediate products are inserted into the melting furnace and boiled for eight hours - of these, for twelve minutes at a temperature of up to 860 ° C. The finished nail file is then rinsed with water after cooling. Example 3 [00011] Intermediate products (future nail files) are cut from a FLOAT glass plate. Four centimeters from the end are kept as the handle, the melt glue is applied to the surfaces and ends of the intermediate product, which will then form the abrasive surface, using the brush. The glue is then sprayed with Petition 870190120932, of 11/21/2019, p. 10/33 / 7 1-20 gm glass sand, using a sieve. The sand is fixed to the surface and the excess sand is then removed. The intermediate products are inserted into the melting furnace and baked for eight hours - of these, for twelve minutes, at a temperature of up to 860 ° C. The finished nail file is rinsed with water after cooling. Example 4 [00012] Intermediate products (future nail files) are cut from a FLOAT glass plate. Four centimeters from the end are kept as the handle. Three horizontal strips are marked on the remaining surface, intended for the abrasive surface. The glue is applied to the first strip, closest to the handle, and the clean quartz sand, with a grain size of 1-30 gm is applied using the sieve. The excess sand is then removed. The glue is applied to the middle strip using a small roller and clean quartz sand, with a grain size of 1 -20 gm is then applied using the sieve. The excess sand is then removed. The last strip on the tip of the nail file is sprayed with quartz sand with a grain size of 1-15 gm. The excess sand is then removed. The intermediate products are then inserted into the melting furnace and baked for eight hours - of these, for twelve minutes at a temperature of 860 ° C. The finished nail file is rinsed with water after cooling. Example 5 [00013] A four cm handle is then marked on both sides of the FLOAT glass plate. The melting glue is applied to the remaining surfaces using the roller. Each part of the glue surface is then sprayed with glass sand of a different grain size. The sand is fixed to the surface and the excess sand is then removed. The plate is then inserted into the melting furnace and baked for eight hours - of these, for ten minutes at a temperature of up to 850 ° C. After cooling, Petition 870190120932, of 11/21/2019, p. 11/33 / 7 the glass plates are cut into strips, which are then cut in the form of nail files. Example 6 [00014] A four centimeter handle is then marked on both sides of the FLOAT glass plate. The wave-shaped abrasive surface is marked on the remaining surface using a brush with glue and is sprayed with quartz sand with a grain size of 1 -20 qm. The base work surface is coated with glue, using the roller, and is then sprayed with clean quartz sand, with a grain size of 1-30 qm. The plate is then inserted into a melting furnace and baked for eight hours - of these, for ten minutes at a temperature of up to 850 ° C. After cooling, the glass plates are cut into strips, which are then cut in the form of nail files. Petition 870190120932, of 11/21/2019, p. 12/33 / 2
权利要求:
Claims (8) [1] 1. Method of manufacturing the grinding surface on glass cosmetics, in particular for a nail file and flat glass skin of the FLOAT type, characterized by the fact that: on one or both sides of the glass plate or of the intermediate product with at least one marked abrasive surface, which is subsequently coated with melting glue and sprayed with clean quartz sand with a grain size of 1-500 pm using a sieve, the excess sand is removed; the intermediate product with the fixed sand is inserted into the melting furnace where it is cooked at a temperature of up to 900 ° C; and, the cooled intermediate product is rinsed with water. [2] 2. Method according to claim 1, characterized in that the surface of the device is roughened by sandblasting before applying glue. [3] Method according to either of claims 1 or 2, characterized in that after the application of the melting glue, the working or non-working surface is decorated with glass frit [4] Method according to any one of claims 1 to 3, characterized by marking the abrasive working surface of the device as symmetrical or as asymmetrical or with decoration. [5] Method according to any one of claims 1 to 4, characterized in that at least two abrasive surfaces, marked on one side of the device, covered with glue, are sprayed with sand on one or both sides of the device, at least twice, each time with a different sand roughness. [6] Method according to any one of claims 1 to 5, characterized by marking the abrasive working surface of the device on both sides of the device, and spraying on each side with quartz sand of different roughness. Petition 870190120932, of 11/21/2019, p. 13/33 2/2 [7] Method according to any one of claims 1 to 6, characterized by marking the abrasive working surface of the individual device on its ends and spraying with quartz sand. [8] Method according to any one of claims 1 to 6, characterized by cutting the glass plates into strips, which are then trimmed in the form of nail files. Petition 870190120932, of 11/21/2019, p. 14/33
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同族专利:
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引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题 GB253410A|1925-10-29|1926-06-17|Gen Electric|Improvements in photo-electric cells| US2592954A|1942-12-16|1952-04-15|Carborundum Co|Method of making flexible abrasive articles| DE59201872D1|1991-05-17|1995-05-18|Bischoff Glastechnik|Glass plate and process for its manufacture.| US6145512A|1994-04-08|2000-11-14|Daley; Scott G.|Colored and decorative nail files and methods for making them| US20020066459A1|2000-12-06|2002-06-06|Turina Ing Jan|Method and device for glass nail files| KR100519704B1|2003-05-16|2005-10-10|이점쇠|Nail file and manufacturing method thereof| CN2778064Y|2004-11-26|2006-05-10|姚明朗|Glass nail file| DE102005013387A1|2005-03-23|2006-09-28|Zwilling J. A. Henckels Aktiengesellschaft|Nail file has handle and file sheet and file sheet is made up of feldspar porcelain whereby file sheet comprises abrasive surface and file is formed in one-piece from porcelain| JP2007261875A|2006-03-28|2007-10-11|Tosoh Quartz Corp|Quartz glass member formed with roughened layer on surface| DE202007010431U1|2007-07-26|2007-10-04|Jensen Steelware Denmark|nailfile|US10378106B2|2008-11-14|2019-08-13|Asm Ip Holding B.V.|Method of forming insulation film by modified PEALD| US9394608B2|2009-04-06|2016-07-19|Asm America, Inc.|Semiconductor processing reactor and components thereof| US8802201B2|2009-08-14|2014-08-12|Asm America, Inc.|Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species| US9312155B2|2011-06-06|2016-04-12|Asm Japan K.K.|High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules| US9793148B2|2011-06-22|2017-10-17|Asm Japan K.K.|Method for positioning wafers in multiple wafer transport| US10364496B2|2011-06-27|2019-07-30|Asm Ip Holding B.V.|Dual section module having shared and unshared mass flow controllers| US10854498B2|2011-07-15|2020-12-01|Asm Ip Holding B.V.|Wafer-supporting device and method for producing same| US9017481B1|2011-10-28|2015-04-28|Asm America, Inc.|Process feed management for semiconductor substrate processing| US9558931B2|2012-07-27|2017-01-31|Asm Ip Holding B.V.|System and method for gas-phase sulfur passivation of a semiconductor surface| US9659799B2|2012-08-28|2017-05-23|Asm Ip Holding B.V.|Systems and methods for dynamic semiconductor process scheduling| US9021985B2|2012-09-12|2015-05-05|Asm Ip Holdings B.V.|Process gas management for an inductively-coupled plasma deposition reactor| US9324811B2|2012-09-26|2016-04-26|Asm Ip Holding B.V.|Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same| US10714315B2|2012-10-12|2020-07-14|Asm Ip Holdings B.V.|Semiconductor reaction chamber 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2018-12-26| B06F| Objections, documents and/or translations needed after an examination request according art. 34 industrial property law| 2019-08-27| B06U| Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure| 2020-03-31| B09A| Decision: intention to grant| 2020-04-22| B16A| Patent or certificate of addition of invention granted|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 12/04/2011, OBSERVADAS AS CONDICOES LEGAIS. | 2020-05-12| B16C| Correction of notification of the grant|Free format text: REF. RPI 2572 DE 22/04/2020 QUANTO AO TITULAR. |
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